Record endurance for single-walled carbon nanotube-based memory cell

Abstract

We study memory devices consisting of single-walled carbon nanotube transistors with charge storage at the SiO 2/nanotube interface. We show that this type of memory device is robust, withstanding over 10 5 operating cycles, with a current drive capability up to 10 -6 A at 20 mV drain bias, thus competing with state-of-the-art Si-devices. We find that the device performance depends on temperature and pressure, while both endurance and data retention are improved in vacuum. © 2010 The Author(s).