High Modulation Bandwidth of Semipolar (11-22) InGaN/GaN LEDs with Long Wavelength Emission

Abstract

Visible light communication requires III-nitride LEDs with a high modulation bandwidth but have c-plane limitations. General illumination requires green/yellow III-nitride LEDs with high optical efficiency that are difficult to achieve on c-plane substrates. Micro-LEDs with a low efficiency are used to obtain a high modulation bandwidth. This paper demonstrates a record modulation bandwidth of 540 MHz for our semipolar green LEDs with a broad area. Semipolar yellow and amber LEDs with modulation bandwidths of 350 and 140 MHz, respectively, have also been reported, and are the longest wavelength III-nitride LEDs. These results agree with differential carrier lifetime measurements.