Design of solid state high power amplifiers for leo satellite communication systems

Abstract

The rapid development of the RF power electronics requires the introduction of wide band gap material due to its potential in high output power density. In this project, an X band (8.1 GHz) solid state power amplifier is designed with an output power of 25 W, bandwidth of 150 MHz as a part of an onboard transmitter. We report our result of an AlGaN/GaN HEMT power amplifier with the operating frequency in X band. There has been significant investment in the development of high performance microwave transistors and amplifiers based on GaN in a satellite communication system.