Abstract
This paper discusses the design and measurement of highly efficient GaN HEMT based power amplifier at L Band. Large signal parameters including PAE and power output are presented at an operating frequency of 1GHz. High efficiency > 82% is achieved by terminating the harmonics at the input as well as at the output and a high output power of 5.2 W is achieved by impedance matching or tuning technique.
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CITATION STYLE
Tomar, S. K., Mishra, M., Kumar, A., & Sehgal, B. K. (2014). Design and Fabrication of GaN HEMT Based Power Amplifier. In Environmental Science and Engineering (pp. 125–126). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-319-03002-9_31
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