Abstract
We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas (2DEG) in GaAs-AlGaAs modulation-doped heterostructures (MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015 cm-3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density (Ns≥5×1011 cm-2) GaAs-AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs-AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs. © 1994 American Institute of Physics.
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CITATION STYLE
Yang, B., Cheng, Y. H., Wang, Z. G., Liang, J. B., Liao, Q. W., Lin, L. Y., … Li, W. (1994). Interface roughness scattering in GaAs-AlGaAs modulation-doped heterostructures. Applied Physics Letters, 65(26), 3329–3331. https://doi.org/10.1063/1.112382
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