Technology that Accompanies the Development of Spintronics Devices

Abstract

I–V measurement of magnetic tunnel junction (MTJ) is very important for the characterization of tunnel junction. Measurement of I–V curve and analysis of the curve will be briefly explained. Also it is described that AFM and STM are useful tool in order to evaluate MTJ. Spin polarization of the electrodes of MTJ is very important value in order to fabricate a high TMR value junction. The measurement method of spin polarization using tunnel junction will be described. Finally, spin dynamics which is very important in order to apply MTJ for devices is described. Particularly, the experimental method of damping constant measurement, the data reported so far, and the origin of damping constant will be explained.