Development of a vibrating-reed MEMS charge sensor on silicon-on-glass technology

Abstract

A new development of a charge sensor based on MEMS vibrating-reed has been proposed in this work. The proposed charge sensing device has been fabricated on silicon-on-glass (SOG) technology than its silicon-on-insulator (SOI) counterpart. For the read-out circuit, a non-inverting voltage-mode amplifier with high pass filter has been designed by an operational amplifier IC. The MEMS charge sensor prototype achieved an experimental sensitivity of 5.5 × 109 V/C (in air) with good linearity and improved resolution.