CITATION STYLE
Hüe, F., Hÿtch, M. J., Hartmann, J.-M., Bogumilowicz, Y., & Claverie, A. (2008). Strain Measurements in SiGe Devices by Aberration-Corrected High Resolution Electron Microscopy (pp. 149–152). https://doi.org/10.1007/978-1-4020-8615-1_31
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