Karakterisasi Material Polimer PVDF dengan Polarisasi Permukaan

Abstract

This article addresses the most challenging question facing the org. spintronics community today - what causes the universal loss of Giant Magnetoresistance (GMR) signal in org. spin valve devices made with different spin-polarized electrodes and org. semiconductor spacers. Careful anal. of our own and other exptl. results available in literature indicate that transition of transport from polaron tunneling limit (suggested by the variable range hopping model) to thermally activated hopping limit (in the temp. range of 40-58 K) marks the most significant decrease of spin relaxation in org. semiconductors. With increasing occupancy of the available hopping sites by the thermally activated carriers, chances of spin flip inside the org. semiconductors increases significantly causing fast spin relaxation in the spin-valves. [on SciFinder(R)]