Diamond based field-effect transistors of Zr gate with sinx dielectric layers

Abstract

Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm-2 and 24.4 cm2·V-1·s-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.