Characterisation of InxAl1-xN Epilayers Grown on GaN

Abstract

InxAl1-xN epilayers were grown on GaN pseudo-substrates at a range of temperatures between 900 degrees C and 750 degrees C. Indium incorporation decreased as the growth temperature was increased, and surface roughness at the I Pm scale was observed to decrease simultaneously. However, due to macroscopic cracking of the samples grown at higher temperature, broader scale surface roughness reached a minimum at 800 degrees C, which corresponded to the layer most closely lattice-matched to the GaN pseudo-substrate.