Local structural analysis of In-doped Bi2Se3 topological insulator using X-ray fluorescence holography

Abstract

We performed X-ray fluorescence holography measurements on an In-doped Bi2Se3 topological insulator and obtained an in-plane atomic image in the vicinity of In. We found that atomic images at the positions of the first nearest neighbors (NNs) are very weak whereas those at the positions of the second and the third NNs are relatively strong. On the basis of the fact that In is half of the atomic number of Bi, we attributed the origin of this feature to the clustering of the In atoms in the Bi plane. We calculated the intensity of the atomic images and confirmed that the formation of In cluster results in a decrease by 30% in the first NN atomic image intensity. However, the decrease in the magnitude is not enough to explain the experimental results, suggesting another contribution such as the lattice distortions. The effect of the lattice distortion on the atomic image intensity is discussed on the basis of the simulation including the positional fluctuation of In atoms.