Thermoelectric power-generation characteristics of a thin-film device processed by the flip-chip bonding of Bi2Te3 and Sb2Te3 thin-film legs using an anisotropic conductive adhesive

Abstract

A thermoelectric thin-film device with a cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bumps on the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin-film legs electrodeposited on the bottom substrate. The internal resistance of the thin-film device was 59 Ω, most of which can be attributed to the interfacial resistance of the 484 flip-chip joints. The thin-film device exhibited an open-circuit voltage of 382mVand a maximum output power of 652μW for a temperature difference of 36.8K applied across its top and bottom substrates.