Poly-Si TFTs are now in mass production for small diagonal displays, and, in this article, the fabrication and performance of these devices are discussed, with particular focus on the formation of poly-Si by excimer laser crystallization, the issues surrounding TFT architecture, and the performance artifacts associated with the high electrostatic field at the drain junction.
CITATION STYLE
Brotherton, S. D. (2016). Polycrystalline silicon thin film transistors (Poly-Si TFTs). In Handbook of Visual Display Technology (pp. 911–942). Springer International Publishing. https://doi.org/10.1007/978-3-319-14346-0_48
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