Opaque-gate ultraviolet sensitive transistors were fabricated on H-terminated polycrystalline diamond. Butterfly shaped structures with different geometric ratios were realized. Observed trends with the gate unbiased demonstrated behavior as p-channel normally-off transistors, switched-on by the impinging UV light. Linearity with the UV beam power was also observed with over-gap radiation. Under steady state illumination, a linear increase of the photocurrent was found when the gate is biased at different voltages in the saturation regime. The operative generation-charge transport mechanism of fabricated devices is discussed. © 2010 Springer Science+Business Media B.V.
CITATION STYLE
Calvani, P., Rossi, M. C., & Conte, G. (2010). Opaque-gate phototransistors on H-terminated diamond. In Lecture Notes in Electrical Engineering (Vol. 54 LNEE, pp. 109–112). https://doi.org/10.1007/978-90-481-3606-3_18
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