Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

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Abstract

Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LSMO with 7 nm polar capping.

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Kumar, A., Barrionuevo, D., Ortega, N., Shukla, A. K., Shannigrahi, S., Scott, J. F., & Katiyar, R. S. (2015). Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions. Applied Physics Letters, 106(13). https://doi.org/10.1063/1.4916732

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