A dissociation mechanism for the [a+c] dislocation in GaN

Abstract

Mixed-type [a+c] dislocations can be identified in atomic-resolution high-angle annular dark-field scanning transmission electron microscope images of GaN viewed along [0001] by use of a Burgers loop analysis and by observation of the depth-dependent displacements associated with the Eshelby twist. These dislocations are found to be able to dissociate resulting in a fault that lies perpendicular to the dislocation glide plane. Consideration of the bonding that occurs in such a fault allows the dissociation reaction to be proposed, and the proposed fault agrees with the experimental images when kinks are incorporated into the model. © Published under licence by IOP Publishing Ltd.