Single shot measurement of a silicon single electron transistor

Abstract

We have fabricated a custom cryogenic complementary metal-oxide- semiconductor integrated circuit that has a higher measurement bandwidth compared to conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorus-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 μs are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing. © 2008 American Institute of Physics.