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Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

Nanoscale Research Letters (2006) 1(1) 57-61
DOI: 10.1007/s11671-006-9002-z
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Abstract

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy. [InlineMediaObject not available: see fulltext.].

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Wang, Z. M., Holmes, K., Mazur, Y. I., Ramsey, K. A., & Salamo, G. J. (2006). Self-organization of quantum-dot pairs by high-temperature droplet epitaxy. Nanoscale Research Letters, 1(1), 57–61. https://doi.org/10.1007/s11671-006-9002-z

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