Ultraviolet photovoltage characteristics of SrTi O3-δ Si heterojunction

Abstract

A photovoltaic effect is observed in the heterostructure of p-Sin-SrTi O3-δ (p: hole carrier type, n: electron carrier type). The current-voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126 mVmJ, the short circuit current of 1.78 mAmJ, and the response time faster than 10 ns for ultraviolet pulsed laser of 25 ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application. © 2005 American Institute of Physics.