We report on a large-area THz antenna which is based on N+ implanted GaAs as a photoconductive material. The antenna consists of an interdigitated electrode structure, where every other electrode gap is covered by a second metallization layer. The antenna concept avoids resonances and offers a high degree of freedom with respect to the focusing of both the THz and the gating beam.
CITATION STYLE
Winnerl, S., Peter, F., Nitsche, S., Dreyhaupt, A., Drachenko, O., Schneider, H., & Helm, M. (2008). Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation. In Narrow Gap Semiconductors 2007 (pp. 167–169). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_40
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