Significance of Hetero-junction in charge plasma gate all around TFET: An investigation

Abstract

In this paper, primarily, the superiority of employing hetero-junction is investigated. The proposed device H-CP-GAA-TFET (hetero-junction charge plasma gate all around TFET) is realised for the first time with AlGaSb/GaAsP gate all around (GAA) structure, and at the same time, to reduce random dopant fluctuations (RDF), a dopingless mechanism called charge plasma (CP) effect is availed through appropriate metal work functions. It is further compared with conventional CP-GAA-TFET. Analysis of basic characteristics yields a high ON current—1.28 * 10-5A/μm and reduced ambipolarity—1.35 * 10-16A/μ m at supply voltage VDD = 0.5 V. It also exhibits an impressive SS—19.7 mV/dec and high Ion/Ioff ratio, approximately 1012.