The Micromagnetics of Magnetoresistive Random Access Memory

  • Zhu J
  • Zheng Y
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Abstract

This review presents the fundamental understanding of micromagnetic behavior in patterned magnetic thin film elements, in particular, the magnetic switching characteristics of various magnetoresistive random access memory (MRAM) device designs. Application of...

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Zhu, J.-G., & Zheng, Y. (2007). The Micromagnetics of Magnetoresistive Random Access Memory. In Spin Dynamics in Confined Magnetic Structures I (pp. 289–325). Springer Berlin Heidelberg. https://doi.org/10.1007/3-540-40907-6_9

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