Abstract
GaP <111>B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60° about the growth axis or 180° in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence on growth temperature. Multislice simulations show different features of the twin types that are useful for further characterisation.
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CITATION STYLE
Karlsson, L. S., Johansson, J., Svensson, C. P. T., Mårtensson, T., Wacaser, B. A., Malm, J.-O., … Wallenberg, L. R. (2008). Structural Characterisation of GaP <111>B Nanowires by HRTEM. In Microscopy of Semiconducting Materials 2007 (pp. 229–232). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_50
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