Abstract
Stressed etch stop liners (ESL) are a common way to increase device performance. Here we investigate the layout dependent channel stress for mono- and multt-layer deposition. By means of empirical pseudopotential method full band structures are calculated and based on full band Boltzmann equation mobilities are extracted. We present for the first time nonlinear mobility enhancement maps for two strain components, in channel and out-of-plane direction, showing that for typical ESL conditions both strain components are important for NFET and PFET.
Cite
CITATION STYLE
Bach, K. H., Liebmann, R., Nawaz, M., Jungemann, C., & Ungersboeck, E. (2007). Nonlinear piezoresistance effect in devices with stressed etch stop liner. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 113–116). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_27
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
