Abstract
Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41•1023 - 3.48•1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.
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CITATION STYLE
Kiseleva, D. V., Yurjev, Y. N., Petrakov, Y. V., Sidelev, D. V., Korzhenko, D. V., & Erofeev, E. V. (2017). Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films. In Journal of Physics: Conference Series (Vol. 789). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/789/1/012028
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