Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition

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Abstract

Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue-shifting of the UV emission which is sensitive to annealing atmosphere. Al doping induces the film growing with its c-axis parallel to the substrate surface. It also introduces non-radiative centers and weakens the UV emission. Al doping widens the film bandgap, which has a quadratic dependence on Al content. Al doping decreases the film resistivity to 5.3 × 10−3 Ω · cm. Annealing has little effect on photoluminescence of the doped films, but it degrades undoped and doped ZnO film conductivity dramatically; and the degradation depends on the annealing ambient.

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Wang, A., Chen, T., Lu, S., Wu, Z., Li, Y., Chen, H., & Wang, Y. (2015). Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition. Nanoscale Research Letters, 10(1). https://doi.org/10.1186/s11671-015-0801-y

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