A thermochemical analysis was made of the oxidation, reduction, and volatilization reactions which occur in the Si-O-C system. One characteristic feature is the high SiO(g) and SiO(g) + CO(g) pressures at the Si(s)-SiO2 and SiC(s)-SiO2(s) interfaces. Active oxidation with weight losses and passive oxidation with weight gains were found on oxidizing Si(s) and SiC(s) in low oxygen pressures above 1000°C. Rapid oxidation was related to the SiO(g) and SiO(g) + C0(g) pressures at the Si(s) or SiC(s)-SiO2(s) interfaces. © 1972 Plenum Publishing Corporation.
CITATION STYLE
Gulbransen, E. A., & Jansson, S. A. (1972). The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide. Oxidation of Metals, 4(3), 181–201. https://doi.org/10.1007/BF00613092
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