A review on the fabrication and reliability of three-dimensional integration technologies for microelectronic packaging: Through-si-via and solder bumping process

Abstract

With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and solder bumping processes are the key interconnection technologies that satisfy the former requirements and receive the most attention from the electronic industries. This review mainly includes two di-rections to get a precise understanding, such as the TSV filling and solder bumping, and explores their reliability aspects. TSV filling addresses the DRIE (deep reactive ion etching) process, includ-ing the coating of functional layers on the TSV wall such as an insulating layer, adhesion layer, and seed layer, and TSV filling with molten solder. Solder bumping processes such as electroplating, solder ball bumping, paste printing, and solder injection on a Cu pillar are discussed. In the reliability part for TSV and solder bumping, the fabrication defects, internal stresses, intermetallic com-pounds, and shear strength are reviewed. These studies aimed to achieve a robust 3D integration technology effectively for future high-density electronics packaging.