Mechanism of dynamic negative bias temperature instability of p-MOSFETs with 13 å oxynitride gate dielectric

Abstract

In this paper, we explore the negative bias temperature instability of p-type metal-oxide-semiconductor field-effect transistors with a 1.3 nm oxynitride gate dielectric under ac dynamic conditions in the frequency range of 200 Hz to 2 MHz and the duty cycle in the range of 25 to 75%. The increase in the threshold voltage shift (ΔVth) under ac stress is generally lower than under dc stress by a factor of two or more. An empirical model is established based on the release and relaxation/recapturing of positive charges. © 2005 The Electrochemical Society. All rights reserved.