Abstract
A new device structure with four epitaxial layers and a recessed gate is proposed for normally-off operation in GaN-FETs. Employment of this structure makes it possible to control accurately the threshold voltage without accurate control of recess etching depth. The high breakdown voltage and the low on-resistance of the fabricated devices are also reported. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
Cite
CITATION STYLE
Kuraguchi, M., Takada, Y., Suzuki, T., Hirose, M., Tsuda, K., Saito, W., … Omura, I. (2007). Normally-off GaN-MISFET with well-controlled threshold voltage. In Physica Status Solidi (A) Applications and Materials Science (Vol. 204, pp. 2010–2013). https://doi.org/10.1002/pssa.200674720
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
