We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol-gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL). The resulting Zn-containing architectures were then converted to ZnO architectures with reduced feature sizes by thermal annealing at 400 °C for 1 h. The imprinted and annealed ZnO architectures were also used as new masters for the size reduction technique. ZnO pillars of 400 nm diameter were obtained from a silicon master with pillars of 1000 nm diameter by simply repeating the size reduction technique. The photosensitivity and contrast of the Zn-containing precursor were measured as 6.5 J cm -2 and 16.5, respectively. Interesting complex ZnO patterns, with both microscale pillars and nanoscale holes, were demonstrated by the combination of dose-controlled UV exposure and a two-step UV-NIL. © 2012 National Institute for Materials Science.
CITATION STYLE
Park, H. H., Zhang, X., Hwang, S. Y., Jung, S. H., Kang, S., Shin, H. B., … Ko, C. K. (2012). Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique. Science and Technology of Advanced Materials, 13(2). https://doi.org/10.1088/1468-6996/13/2/025003
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