Optical band gap of BiFe O3 grown by molecular-beam epitaxy

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Abstract

BiFe O3 thin films have been deposited on (001) SrTi O3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFe O3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with ω rocking curve full width at half maximum values as narrow as 29 arc sec (0.008°). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFe O3 films. © 2008 American Institute of Physics.

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Ihlefeld, J. F., Podraza, N. J., Liu, Z. K., Rai, R. C., Xu, X., Heeg, T., … Schlom, D. G. (2008). Optical band gap of BiFe O3 grown by molecular-beam epitaxy. Applied Physics Letters, 92(14). https://doi.org/10.1063/1.2901160

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