Improvement of resistive switching characteristics in solution- synthesized Al, Cr, and Cu-doped TiO2 films

Abstract

Several metal elements (Al, Cr, and Cu) with different valence numbers were doped into a solution-synthesized TiO2 film, and the corresponding resistive switching characteristics were investigated in relation to the oxygen vacancies and chemical composition. In contrast to the pure TiO2 sample, the doped samples exhibited a better switching uniformity and a lower set voltage (Vset), which was attributed to the enhanced oxygen vacancy generation. Furthermore, the bivalent copper ions doped sample acquires a better RS performance as compared to the trivalent ions doped samples. These doping effects can be controlled in a continuous manner by selecting dopants based on the valence state of doped ions. © 2014 The Electrochemical Society.