Improving the performance of green leds by low-temperature annealing of p-gan with pdzn

Abstract

This article reports the electrical properties of p-GaN annealed at low activation temperature by using a PdZn film in green InGaNGaN multiquantum well (MQW) light-emitting diodes (LEDs). Electroluminescence (EL) intensity of green MQW LED annealed at 600°C using PdZn was improved by 33% at 20 mA compared to that annealed at 800°C without PdZn. These results are attributed to an increase of the hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and a decrease in thermal damage of MQW at low activation temperature. © 2009 The Electrochemical Society.