Recent Progress in XAFS Study for Semiconducting Thin Films

Abstract

X-ray absorption fine structure (XAFS) is a powerful structural analysis tool for studying the local structure in thin films. In the recent developments of this technology, high-brightness light emitting diodes and laser diodes are applied to semiconducting InGaN nanolayers. In this chapter, we provide a brief review on basic theory and measurements of XAFS, and then present some recent results of XAFS application to c-plane (0001) InGaN, m-plane (1-100) InGaN, m-plane AlGaN, and c-plane MgZnO to reveal the atomic distribution and the interatomic distances in the films.