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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

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Abstract

It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed. © 1995 The American Physical Society.

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Nilsson, P. O., Kanski, J., Thordson, J. V., Andersson, T. G., Nordgren, J., Guo, J., & Magnuson, M. (1995). Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission. Physical Review B, 52(12). https://doi.org/10.1103/PhysRevB.52.R8643

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