Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation

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Abstract

In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm -1/GPa, respectively. © 2011 Author(s).

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Lu, J. Y., Deng, D. M., Wang, Y., Chen, K. J., Lau, K. M., & Zhang, T. Y. (2011). Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation. AIP Advances, 1(3). https://doi.org/10.1063/1.3626532

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