Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology

Abstract

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750°C. The epitaxial relationship was determined to be ZnO(001)∥Si(001) in the direction normal to the surface of the films with a deviated angle less than 3° and ZnO[100]∥Si[110] or ZnO[310]∥Si[110] in the plan view, Based on (2 × 1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures. © 2006 American Institute of Physics.