Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.
CITATION STYLE
Kim, S., Kim, S. K., Shin, S., Han, J. H., Geum, D. M., Shim, J. P., … Kim, H. J. (2019). Highly stable self-aligned Ni-InGaAs and non-self-aligned mo contact for monolithic 3-D integration of InGaAs MOSFETs. IEEE Journal of the Electron Devices Society, 7, 869–877. https://doi.org/10.1109/JEDS.2019.2907957
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