Highly stable self-aligned Ni-InGaAs and non-self-aligned mo contact for monolithic 3-D integration of InGaAs MOSFETs

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Abstract

Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.

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Kim, S., Kim, S. K., Shin, S., Han, J. H., Geum, D. M., Shim, J. P., … Kim, H. J. (2019). Highly stable self-aligned Ni-InGaAs and non-self-aligned mo contact for monolithic 3-D integration of InGaAs MOSFETs. IEEE Journal of the Electron Devices Society, 7, 869–877. https://doi.org/10.1109/JEDS.2019.2907957

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