III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers

Abstract

Metalorganic chemical vapor deposition (MOCVD) growth of InP-based quantum cascade laser (QCL) structures on a Si (001) substrate is demonstrated by employing a metamorphic InP buffer layer with InAs/InP quantum dots as dislocation filters. Calibration samples consist of a strain-compensated 11.98 nm In0.365Al0.635As/14.8 nm In0.64Ga0.36As superlattice (SL) structure as well as 5-stages of the λ ≈ 4.8 µm QCL active region, which are grown atop the metamorphic buffer and are used to assess the structural properties of the SL through high-resolution X-ray diffraction and high-resolution transmission electron microscopy. Full QCL structures with 40-stage active region are fabricated into edge-emitting ridge-waveguide structures and demonstrate low temperature electroluminescence with a FWHM of 48.6 meV.