Wafer bonding is an attractive technology that can join homo/heterogeneous materials into one composite. It has a wide range of applications in the micro-electro-mechanical system (MEMS), integrated circuit, consumer and power electronics, micro/nanofluidics, etc. Since all devices on the same wafer are sealed and tested at wafer size, it brings lots of benefits compared with the component-level packaging, such as substantial savings in time, materials, and labor. In this review, we firstly introduce the low- and room-temperature Si bonding and their applications in MEMS fabrication. Subsequently, we present applications of the third-generation semiconductor bonding towards optoelectronics. Due to the research in the electro-optical modulation of lithium niobate (LiNbO3) has made revolutionary progress in recent years, we also show the bonding method towards single-crystal LiNbO3 thin-film fabrication. Finally, we set our sights on the bonding of infrared materials, which might be the next research hotspot for the emerging ultrasensitive sensors.
CITATION STYLE
Xu, J., Du, Y., Tian, Y., & Wang, C. (2020). Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics. International Journal of Optomechatronics. Bellwether Publishing, Ltd. https://doi.org/10.1080/15599612.2020.1857890
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