The current researches on GaN- and ZnO-based nanostructures are reviewed with the emphasis on fundamental growth kinetics, characteristics, and applications. The nanostructured materials have unique properties and the devices employing the nanostructures show superior performances when compared with the conventional devices without the nanostructures. Control of shapes and sizes of the nanostructures has been possible by changing the synthetic methods or by processing. ZnO- and GaN-based nanostructures can successfully be used for fabrications of various sensors, transistors as well as for photonic device applications including light emitting diodes.
CITATION STYLE
Lee, S. H. (2009). ZnO and GaN Nanostructures and their Applications (pp. 459–505). https://doi.org/10.1007/978-3-540-88847-5_10
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