Synthesis of graphene films on copper substrates by CVD of different precursors

Abstract

In the present work, graphene films of the order of 1cm2 were grown on copper foil substrates by CVD using hydrogen/methane or hydrogen/argon/ethanol mixtures as gas precursors. The growth processes were performed near 1,000◦C both at atmospheric and low pressures. A system for the fast cooling of the sample, based on the fast extraction from the hot zone of the furnace, was implemented allowing for rapid decrease of the temperature below 600◦C in few seconds. Samples grown under different conditions were analyzed by SEM, Raman spectroscopy and XPS with the aim to assess their characteristics and to refine the growth process.