Influence of Source-Gate and Gate lengths variations on GaN HEMTs based biosensor

Abstract

AIGaN/GaN has been considered as a promising candidate for bio-sensing applications due to their outstanding properties. Scaling of gate length and source to gate length plays a key role in the performance of biosensor as it directly influences the device transconductance and hence the sensitivity and response time of biosensors. In this paper, we investigated the effect of variations in gate lengths (lµm to Sµm) and source to gate length (lµm to 3µm) to choose the most suitable one for bio sensing applications. Downscaling of gate length (Le) and source to gate length (Lsd improve the device performance, enhancing the drain-current (Id,) and device transconductance. The results of simulations indicate that Lclµm_Lsclµm with constant Lso configuration shows highest output current 1.01 A/mm, transconductance (gm) 211mS/mm with lowest value of gate leakage current. Irrespective of Lsc, effect of variation in Le follows same trend.