Magnetic disk read-heads, magnetic random access memories and spin-dependent transport structures can all be covered by the term magnetoelectronic devices. This review covers spin-dependent transport in magnetic multilayers and aspects of exploitation of this physical property magnetic non-volatile memories (MRAM). The imbalance in the density of states for majority spin-carriers versus minority spin carriers in magnetic materials, triggers spintronic materials and device developments. Such devices are characterized by the fascinating interplay of electronic and magnetic properties.
CITATION STYLE
De Boeck, J., & Borghs, G. (1999). Magnetoelectronic devices. In Technical Digest - International Electron Devices Meeting (pp. 215–218). IEEE. https://doi.org/10.1007/978-94-017-0532-5_6
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