Room-temperature polariton lasing in GaN microrods with large Rabi splitting

Abstract

Room-temperature polariton lasing is achieved in GaN microrods grown by metal-organic vapor phase epitaxy. We demonstrate a large Rabi splitting (Ω = 2g 0 ) up to 162 meV, exceeding the results from both the state-of-the-art nitride-based planar microcavities and previously reported GaN microrods. An ultra-low threshold of 1.8 kW/cm 2 is observed by power-dependent photoluminescence spectra, with the linewidth down to 1.31 meV and the blue shift up to 17.8 meV. This large Rabi splitting distinguishes our coherent light emission from a conventional photon lasing, which strongly supports the preparation of coherent light sources in integrated optical circuits and the study of exciting phenomena in macroscopic quantum states.