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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Bulletin of Materials Science (1994) 17(6) 1057-1064
DOI: 10.1007/BF02757582
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Abstract

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed. © 1994 Indian Academy of Sciences.

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Gurumurthy, S., Rao, K. S. R. K., Sreedhar, A. K., Bhat, H. L., Sundersheshu, B., Bagai, R. K., & Kumar, V. (1994). Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. Bulletin of Materials Science, 17(6), 1057–1064. https://doi.org/10.1007/BF02757582

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