Abstract
This paper describes the various studies performed on a representative quaternary thin film device of composition Ge15Te70In5Ag10, which could be an important material for phase change memory and data storage application. The I-V Characteristics (Switching characteristics), X-RAY Diffraction (XRD) and Energy-Dispersive X-ray analysis (EDAX) studies have been performed to show that the given material has some favorable characteristics as its application as phase change memory (PCM).
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CITATION STYLE
Roy, D., Agrawal, S., Sreevidya Varma, G., & Das, C. (2020). Switching Studies on Ge15Te70In5Ag10 Thin Films Device for Phase Change Memory Applications. In Lecture Notes in Networks and Systems (Vol. 80, pp. 413–420). Springer. https://doi.org/10.1007/978-3-030-23162-0_37
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