Abstract
Hall coefficient (RH) and magnetoresistance (MR) effects were studied at room temperature and 77 K for undoped quantum well (QW) structures of InSb sandwiched by Al0.1In0.9Sb alloy grown by molecular beam epitaxy on GaAs substrates. As the result of two-carrier analyses of R-H, it was found that the sheet density of the extrinsic electrons at room temperature decreases with the increase of the well width above 100 nm. At 77 K the electrons extended in the QW show the negative longitudinal
Cite
CITATION STYLE
Fujimoto, A., Ishida, S., Manago, T., Geka, H., Okamoto, A., & Shibasaki, I. (2008). Extrinsic Electrons and Carrier Accumulation in AlxIn1−xSb/InSb Quantum Wells: Well-Width Dependence. In Narrow Gap Semiconductors 2007 (pp. 199–201). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8425-6_46
Register to see more suggestions
Mendeley helps you to discover research relevant for your work.
